Regrowth of Ge with different degrees of damage under thermal and athermal treatment-Reference-Cited by-同舟云学术

Regrowth of Ge with different degrees of damage under thermal and athermal treatment

Published:2016 Issue:6 Volume:6 Page:4576-4586
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Hooda Sonu¹²³,Satpati B.⁴⁵³^ORCID,Kumar Tanuj⁶³,Ojha Sunil¹²³,Kanjilal D.¹²³,Kabiraj D.¹²³

Affiliation:

1. Inter-University Accelerator Centre

2. New Delhi-110067

3. India

4. Saha Institute of Nuclear Physics

5. Kolkata-700064

6. Central University of Haryana

Abstract

In this report, the recrystallization of pre-damaged Ge samples is extensively investigated under steady-state thermal annealing and ultrafast thermal spike-assisted annealing generated by high-energy ions.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA20502F

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4. Monolayer Graphene/Germanium Schottky Junction As High-Performance Self-Driven Infrared Light Photodetector

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