Channeling effects in high energy implantation of N+ in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference25 articles.
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1. Electrical properties of in-plane-implanted graphite nanoribbons;Journal of Applied Physics;2017-12-28
2. Depth profiling of high energy nitrogen ions implanted in the 〈100〉, 〈110〉 and randomly oriented silicon crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-03
3. Defect production in silicon irradiated with 5.68 GeV Xe ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-02
4. Range profiles of 6–10 MeV 15N ions implanted in silicon;Applied Surface Science;1995-12
5. Influence of channeling effects on ion distribution and damage profiles during high energy ion implantation in Si;Mikrochimica Acta;1994-12
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