Channeled‐ion implantation of group‐III and group‐V ions into silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325399
Reference8 articles.
1. Channeling and dechanneling of ion‐implanted phosphorus in silicon
2. Channeling of boron ions into silicon
3. Channeling of medium-mass ions through silicon
4. Planar and axial channeling of 800‐keV As in 〈110〉 silicon
5. Range Measurements in Oriented Tungsten Single Crystals (0.1-1.0 MeV). II. A Detailed Study of the Channeling ofK42Ions
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