Channeling implantation of B and P in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
1. Uniform doping of channeled‐ion implantation
2. The ASM-220 medium current implanter
3. In situ uniformity control, dose monitoring and correction
4. Features of the ASM-220 end station
5. Trench sidewall implantation with a parallel scanned ion beam
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1. Impact of Post-Implantation Annealing Conditions on Electrical Characteristics of a Phosphorus-Implanted Emitter Crystalline Silicon Solar Cell;IEEE Journal of Photovoltaics;2017-05
2. Towards pump–probe experiments of defect dynamics with short ion beam pulses;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-11
3. Channeling in Manufacturing Sharp Junctions: a Molecular Dynamics Study;Physica Scripta;1999
4. Efficient molecular dynamics scheme for the calculation of dopant profiles due to ion implantation;Physical Review E;1998-06-01
5. Simulation of Phosphorus Implantation into Silicon with a Single Parameter Electronic Stopping Power Model;International Journal of Modern Physics C;1998-05
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