Trench sidewall implantation with a parallel scanned ion beam-Reference-Cited by-同舟云学术

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Trench sidewall implantation with a parallel scanned ion beam

Published:1990-04 Issue:4 Volume:37 Page:1052-1056
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kakoschke R.,Kaim R.E.,van der Meulen P.F.H.M.,Westendorp J.F.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/1888/00052441.pdf?arnumber=52441

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Fast-Switching and Low-Loss SOI LIGBT With Recombination Electrode and Double U-Shaped P-Regions;IEEE Transactions on Electron Devices;2023-02

4. Axial asymmetry for improved sensitivity in MEMS piezoresistors;Journal of Micromechanics and Microengineering;2016-07-20

5. Application of Plasma-Doping (PLAD) Technique to Reduce Dark Current of CMOS Image Sensors;IEEE Electron Device Letters;2007-02

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