Author:
Pollock J.D.,Milgate R.W.,McRay R.F.,Kaim R.E.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The role of extended defects on transient boron diffusion in ion-implanted silicon;Materials Science and Engineering: B;1992-02
2. Pre-amorphization damage in ion-implanted silicon;Materials Science Reports;1991-08
3. Channeling implantation of B and P in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04
4. A system and performance overview of the EXTRION 220 medium-current ion implanter;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04