Non-invasive nano-imaging of ion implanted and activated copper in silicon-Reference-Cited by-同舟云学术

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Non-invasive nano-imaging of ion implanted and activated copper in silicon

Published:2011-07-15 Issue:2 Volume:110 Page:024307
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ballout Fouad,Samson Jean-Sébastien,Schmidt Diedrich A.,Bründermann Erik,Mathis Yves-Laurent,Gasharova Biliana,Dirk Wieck Andreas,Havenith Martina

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3606415

Reference32 articles.

1. Nanodevices produced with focussed ion beams

2. On amorphous layer formation in silicon by ion implantation

3. Near-field probing of vibrational absorption for chemical microscopy

4. Infrared near-field imaging of implanted semiconductors: Evidence of a pure dielectric contrast

5. Terahertz Near-Field Nanoscopy of Mobile Carriers in Single Semiconductor Nanodevices

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Combined far- and near-field chemical nanoscope at ANKA-IR2: applications and detection schemes;Journal of Physics: Conference Series;2012-05-04

2. Introducing cymantrene labels into scattering scanning near-field infrared microscopy;The Analyst;2012

3. A matter of scale: from far-field microscopy to near-field nanoscopy;Laser & Photonics Reviews;2011-12-02

4. High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition;Applied Physics Letters;2011-10-03

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