On amorphous layer formation in silicon by ion implantation
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420157408230781
Reference17 articles.
1. A model for the formation of amorphous Si by ion bombardment
2. Crowder, B. L. 1972.Ion Implantation in Semiconductors, Edited by: Namba, S. 63Japan Soc. for the Promotion of Science.
3. Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose
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