High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition

Published:2011-10-03 Issue:14 Volume:99 Page:141905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ratcliff C.,Grassman T. J.,Carlin J. A.,Ringel S. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3644956

Reference18 articles.

1. MOCVD Growth of InGaP on GaP Substrates and Its Application to Visible LEDs

2. Simulation assisted design of a gallium phosphide n–p photovoltaic junction

3. T. J. Grassman, A. M. Carlin, and S. A. Ringel, in Proceedings Of the 35th IEEE Photovoltaics Specialists Conference (IEEE, Piscataway, NJ, 2010), p. 002029.

4. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells

5. The heteroepitaxial growth of GaP films on Si substrates

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