Atomistic Mechanism of 4 H - SiC/SiO2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices
Author:
Funder
Science Challenge Project
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.15.034007/fulltext
Reference47 articles.
1. Silicon carbide: A unique platform for metal-oxide-semiconductor physics
2. Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects
3. Interface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors
4. The mechanism of defect creation and passivation at the SiC/SiO2interface
5. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs
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1. Three-Dimensional (3D) Nondestructive Characterization of the Spatial Distribution and Complex Properties of Polytypes on 4H-SiC Wafers;ACS Applied Electronic Materials;2024-09-12
2. Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs;Results in Physics;2024-05
3. 4H-SiC/SiO2 Interface Degradation in 1.2 kV 4H-SiC MOSFETs Due to Power Cycling Tests;Electronics;2024-03-28
4. Adhesion and electronic properties of 4H-SiC/α-Al2O3 interfaces with different terminations calculated via first-principles methods;Surfaces and Interfaces;2023-10
5. The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations;Applied Surface Science;2023-03
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