Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs
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Published:2024-05
Issue:
Volume:60
Page:107672
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ISSN:2211-3797
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Container-title:Results in Physics
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language:en
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Short-container-title:Results in Physics
Author:
He Mu, Dong PengORCID, Ma YaoORCID, Yu Qingkui, Cao Shuang, Huang Wende, Xu Qian, Zhang Sijie, Huang Mingmin, Li Yun, Yang Zhimei, Gong Min
Reference39 articles.
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