Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs-Reference-Cited by-同舟云学术

Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs

Published:2016-11-02 Issue:4 Volume:214 Page:1600446
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Murata Koichi¹²,Mitomo Satoshi¹²,Matsuda Takuma¹²,Yokoseki Takashi¹²,Makino Takahiro²,Onoda Shinobu²,Takeyama Akinori²,Ohshima Takeshi²,Okubo Shuichi³,Tanaka Yuki³,Kandori Mikio³,Yoshie Toru³,Hijikata Yasuto¹

Affiliation:

1. Saitama University; Sakuraku Saitama 338-8570 Japan

2. National Institutes for Quantum and Radiological Science and Technology (QST); Takasaki 370-1292 Japan

3. Sanken Electric Co., Ltd.; Niiza Saitama 352-8666 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600446/fullpdf

Reference27 articles.

1. M. Bhatnagar B. J. Baliga 91 1991 176 180

2. Silicon carbide high-power devices

3. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

4. γ-Ray irradiation effects on 6H-SiC MOSFET

5. Silicon carbide benefits and advantages for power electronics circuits and systems

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