Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1−xSnx Semiconductors
Author:
Funder
Fonds de recherche du Québec-Nature et technologies
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.15.024031/fulltext
Reference48 articles.
1. Lasing in direct-bandgap GeSn alloy grown on Si
2. Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
3. Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K
4. Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
5. Extreme IR absorption in group IV-SiGeSn core-shell nanowires
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