Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
Author:
Affiliation:
1. Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7, Canada
2. Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
Funder
MRIF Quebec
Canada Research Chairs
Mitacs
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
Natural Sciences and Engineering Research Council of Canada
Canada Foundation for Innovation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5038644
Reference45 articles.
1. Group IV Photonics: Driving Integrated Optoelectronics
2. Practical Materials Chemistry Approaches for Tuning Optical and Structural Properties of Group IV Semiconductors and Prototype Photonic Devices
3. Optically Pumped GeSn Microdisk Lasers on Si
4. Lasing in direct-bandgap GeSn alloy grown on Si
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