Composition and strain dependence of intrinsic and substitutional defect formation energies in Sn<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si7.svg" display="inline" id="d1e376"><mml:msub><mml:mrow /><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:math>Ge<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si8.svg" display="inline" id="d1e384"><mml:msub><mml:mrow /><mml:mrow><mml:mi mathvariant="normal">1−x</mml:mi></mml:mrow></mml:msub></mml:math> alloys-Reference-Cited by-同舟云学术

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Composition and strain dependence of intrinsic and substitutional defect formation energies in SnxGe1−x alloys

Published:2023-08 Issue: Volume:12 Page:100125
ISSN:2666-8459
Container-title:Results in Surfaces and Interfaces
language:en
Short-container-title:Results in Surfaces and Interfaces

Author:

Chizmeshya A.V.G.^ORCID,Masoumi N.

Publisher

Elsevier BV

Subject

General Medicine

Reference45 articles.

1. Influence of Sn incorporation and growth temperature on crystallinity of Ge1- xSnx layers heteroepitaxially grown on Ge (110) substrates;Asano;Thin Solid Films,2013

2. Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation;Assali;J. Appl. Phys.,2019

3. Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5μm room-temperature optical emission;Assali;Appl. Phys. Lett.,2018

4. Tunable band structure in diamond–cubic tin–germanium alloys grown on silicon substrates;Bauer;Solid State Commun.,2003

5. Ground State of the Electron Gas by a Stochastic Method

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