Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.88.105506/fulltext
Reference19 articles.
1. Pushing the Limits
2. The solid solubility and thermal behavior of metastable concentrations of As in Si
3. Point defects and dopant diffusion in silicon
4. Heavy doping effects in the diffusion of group IV and V impurities in silicon
5. Annealing of Heavily Arsenic-Doped Silicon: Electrical Deactivation and a New Defect Complex
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