First principles simulations of microscopic mechanisms responsible for the drastic reduction of electrical deactivation defects in Se hyperdoped silicon-Reference-Cited by-同舟云学术

First principles simulations of microscopic mechanisms responsible for the drastic reduction of electrical deactivation defects in Se hyperdoped silicon

Published:2021 Issue:43 Volume:23 Page:24699-24710
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Debernardi Alberto¹^ORCID

Affiliation:

1. CNR-IMM, Unit of Agrate Brianza, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy

Abstract

By first principles simulations of Se hyperdoped silicon we explain the drastic reduction of electrical deactivation defects when the dopant population approaches the critical concentration at which the insulator-to-metal transition occurs.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D1CP02899E

Reference43 articles.

1. Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing

2. Room-temperature short-wavelength infrared Si photodetector

3. Room‐Temperature Infrared Photoresponse from Ion Beam–Hyperdoped Silicon

4. Understanding intermediate-band solar cells

5. Intermediate band solar cells: Recent progress and future directions

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