Critical Role of Surface Steps in the Alloying of Ge on Si(001)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.92.216104/fulltext
Reference15 articles.
1. UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications
2. Thermodynamic properties of Si-Ge alloys
3. Evolution of the strain relaxation in a Ge layer on Si(001) by reconstruction and intermixing
4. Ge Epitaxial Overlayers on Si(001) Studied by Surface-Sensitive X-Ray Absorption Fine Structure: Evidence for Strain-Induced Surface Rearrangement
5. Existence of a stable intermixing phase for monolayer Ge on Si(001)
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