Ge Epitaxial Overlayers on Si(001) Studied by Surface-Sensitive X-Ray Absorption Fine Structure: Evidence for Strain-Induced Surface Rearrangement-Reference-Cited by-同舟云学术

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Ge Epitaxial Overlayers on Si(001) Studied by Surface-Sensitive X-Ray Absorption Fine Structure: Evidence for Strain-Induced Surface Rearrangement

Published:1994-06-15 Issue:Part 1, No. 6A Volume:33 Page:3545-3552
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oyanagi Hiroyuki,Sakamoto Kunihiro,Shioda Ryu,Sakamoto Tsunenori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin films of Ge on the Si(100)2 × 1 surface;Surface and Interface Analysis;2017-11-28

2. X-ray absorption fine structure spectroscopy in nanomaterials;Science China Materials;2015-04

3. Local structures of Si/Gen/Si(001) hetero-structure films studied by grazing incidence fluorescence X-ray absorption fine structure;Acta Physica Sinica;2007

4. Short-range order structures of self-assembled Ge quantum dots probed by multiple-scattering extended x-ray absorption fine structure;Physical Review B;2005-06-30

5. Critical Role of Surface Steps in the Alloying of Ge on Si(001);Physical Review Letters;2004-05-28

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