Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene-Reference-Cited by-同舟云学术

Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene

Published:2014-09-11 Issue:11 Volume:113 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Susi Toma,Kotakoski Jani,Kepaptsoglou Demie,Mangler Clemens,Lovejoy Tracy C.,Krivanek Ondrej L.,Zan Recep,Bangert Ursel,Ayala Paola,Meyer Jannik C.,Ramasse Quentin

Funder

Austrian Science Fund (FWF)

Suomen Kulttuurirahasto (Finnish Cultural Foundation)

European Research Council (ERC)

Engineering and Physical Sciences Research Council (EPSRC)

Walter Ahlström Foundation

University of Helsinki Funds

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.113.115501/fulltext

Reference32 articles.

1. Direct Imaging of Lattice Atoms and Topological Defects in Graphene Membranes

2. Ion Implantation of Graphene—Toward IC Compatible Technologies

3. Probing the Bonding in Nitrogen-Doped Graphene Using Electron Energy Loss Spectroscopy

4. Direct Determination of the Chemical Bonding of Individual Impurities in Graphene

5. Probing the Bonding and Electronic Structure of Single Atom Dopants in Graphene with Electron Energy Loss Spectroscopy

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