First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.65.207/fulltext
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1. Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices
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3. Metastable Defects in Amorphous-Silicon Thin-Film Transistors
4. Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
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