Photoluminescence of Tensile Strained, Exactly Strain Compensated, and Compressively StrainedSi1−x−yGexCyLayers on Si
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.80.3396/fulltext
Reference11 articles.
1. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
2. Near-Band-Edge Photoluminescence from PseudomorphicSi1−yCy/SiQuantum Well Structures
3. Monte Carlo Studies of Ternary Semiconductor Alloys: Application to theSi1−x−yGexCySystem
4. Short-range order, bulk moduli, and physical trends in c-Si1−xCxalloys
5. Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)
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