Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Cited by
115 articles.
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1. Effect of N-type doping and vacancy formation on the thermodynamic, electrical, structural, and bonding properties of Si: X. (X = P, As, and Sb): a theoretical study;Semiconductor Science and Technology;2020-10-13
2. Structural, bonding, and elastic properties of Si:X (X = B, Al, and Ga): a theoretical study;Semiconductor Science and Technology;2020-04-22
3. Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers;Journal of Alloys and Compounds;2019-06
4. Effects of Phosphorus Doping and Postgrowth Laser Annealing on the Structural, Electrical, and Chemical Properties of Phosphorus-Doped Silicon Films;ACS Applied Electronic Materials;2019-02-25
5. Role of 2×1 surface reconstruction on Stranski–Krastanov growth illustrated using a modified solid-on-solid model;Journal of Crystal Growth;2017-01