Silicon-Carbon alloy film formation on Si(100) using SiH 4 and CH 4 reaction under low-energy ECR Ar plasma irradiation-Reference-Cited by-同舟云学术

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Silicon-Carbon alloy film formation on Si(100) using SiH 4 and CH 4 reaction under low-energy ECR Ar plasma irradiation

Published:2017-11 Issue: Volume:70 Page:188-192
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Sasaki Shogo,Sakuraba Masao,Akima Hisanao,Sato Shigeo

Funder

Ministry of Education, Culture, Sports, Science and Technology of Japan

Tohoku University

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si0.8Ge0.2 heterostructures grown on Si(1 0 0) by low-temperature ultraclean LPCVD

2. Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1−xGex/Si(100) heterostructure

3. Fabrication of high-Ge-fraction strained Si1−xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers

4. Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode

5. Tunnel field-effect transistors as energy-efficient electronic switches

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