Atomic-scale mechanisms for surfactant-mediated layer-by-layer growth in homoepitaxy
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.72.693/fulltext
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2. Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
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5. Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formation
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