B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl3 on Si(100)-Reference-Cited by-同舟云学术

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B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl3 on Si(100)

Published:2021-08-18 Issue:34 Volume:13 Page:41275-41286
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Dwyer Kevin J.¹^ORCID,Baek Sungha¹,Farzaneh Azadeh²,Dreyer Michael¹,Williams James R.¹,Butera Robert E.³^ORCID

Affiliation:

1. Department of Physics, University of Maryland, College Park, Maryland 20742, United States

2. Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, United States

3. Laboratory for Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740, United States

Funder

Sandia National Laboratories

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c10616

Reference54 articles.

1. Spin blockade and exchange in Coulomb-confined silicon double quantum dots

2. Quantum computing with acceptor spins in silicon

3. Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon

4. Bottom-up superconducting and Josephson junction devices inside a group-IV semiconductor

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1. Topological states in honeycomb arrays of implanted acceptors in semiconductors;New Journal of Physics;2024-06-01

2. PBr3 adsorption on a chlorinated Si(100) surface with mono- and bivacancies;The Journal of Chemical Physics;2024-02-01

3. Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $$\delta$$-layer tunnel junctions;Scientific Reports;2023-12-18

4. Enhancing the reactivity of Si(100)–Cl toward PBr3 by charging Si dangling bonds;The Journal of Chemical Physics;2023-12-01

5. Influence of imperfections on tunneling rate in δ -layer junctions;Physical Review Applied;2023-11-08

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