Stability of Si-Interstitial Defects: From Point to Extended Defects
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.84.503/fulltext
Reference21 articles.
1. Implantation and transient B diffusion in Si: The source of the interstitials
2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
3. Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon
4. {113} Loops in electron-irradiated silicon
5. An Atomic Model of Electron-Irradiation-Induced Defects on {113} in Si
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