Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework-Reference-Cited by-同舟云学术

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Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework

Published:2023-02 Issue: Volume:200 Page:108521
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Julliard P.L.,Johnsson A.,Zographos N.,Demoulin R.,Monflier R.,Jay A.,Er-Riyahi O.,Monsieur F.,Joblot S.,Deprat F.,Rideau D.,Pichler P.,Hémeryck A.,Cristiano F.

Funder

Horizon 2020

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices;Nyamhere;J Appl Phys,2015

2. Finfet IO device performance gain with heated implantation;Wen,2018

3. Multiscale modeling of doping processes in advanced semiconductor devices;Zographos;Mater Sci Semicond Process,2017

4. Sentaurus Process User Guide, R-2020.09, Synopsys Inc.

5. From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon;Martin-Bragado;Solid-State Electron,2008

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