Step-Controlled Strain Relaxation in the Vicinal Surface Epitaxy of Nitrides
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.95.086101/fulltext
Reference21 articles.
1. Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers
2. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers
3. Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy
4. Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy
5. Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy
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3. Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates;physica status solidi (RRL) – Rapid Research Letters;2022-10-25
4. Morphological Transition of Vicinal 4H-SiC Surface Observed during Repeated Annealing;ACS Applied Nano Materials;2022-09-29
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