Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference55 articles.
1. GaN grown on hydrogen plasma cleaned 6H‐SiC substrates
2. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers
3. Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy
4. Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates
5. Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers
Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition;Vacuum;2023-11
2. Low stress AlGaN/GaN heterojuction with AlGaN buffer grown on 6-inch semi-insulating SiC substrate;Journal of Crystal Growth;2023-06
3. Epitaxial of III-Nitride LED Materials;Springer Series in Materials Science;2020
4. Organometallic Vapor Phase Epitaxial Growth of Group III Nitrides ☆;Reference Module in Materials Science and Materials Engineering;2017
5. The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2014-07-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3