Organometallic Vapor Phase Epitaxial Growth of Group III Nitrides ☆

Author:

Davis Robert F.,Saliqur Rahman Abu Zayed Mohammad

Publisher

Elsevier

Reference96 articles.

1. Organometallic vapor-phase epitaxy of gallium nitride for high-brightness blue light-emitting diodes;Akasaki,1997

2. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p–n junction LED;Akasaki;Journal of Luminescence,1989

3. Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−x Alx N (0;Akasaki;Journal of Crystal Growth,1989

4. Growth and applications of group III-nitrides;Ambacher;Journal of Physics D: Applied Physics,1998

5. Hydrogen in gallium nitride grown by MOCVD;Ambacher;Physica Status Solidi ((a)),1997

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