Morphological Transition of Vicinal 4H-SiC Surface Observed during Repeated Annealing
Author:
Affiliation:
1. Department of Physics, Xiamen University, Xiamen361005, China
Funder
National Natural Science Foundation of China
Presidential Research Fund of Xiamen University
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c04108
Reference35 articles.
1. High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3∕SiO2 films
2. Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension*
3. Raman Investigation of SiC Polytypes
4. Temperature-Induced Semiconductingc(4×2)⇔Metallic(2×1)Reversible Phase Transition on theβ-SiC(100) Surface
5. Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
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