Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC-Reference-Cited by-同舟云学术

Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC

Published:2022-05-04 Issue:23 Volume:34 Page:2201169
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Feng Sirui¹²^ORCID,Zheng Zheyang¹²^ORCID,Cheng Yan¹,Ng Yat Hon¹,Song Wenjie¹,Chen Tao¹,Zhang Li¹,Liu Kai³,Cheng Kai³,Chen Kevin J.¹²

Affiliation:

1. Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong 999077 China

2. Research Institute The Hong Kong University of Science and Technology Shenzhen Research Institute Shenzhen 518057 China

3. Enkris Semiconductor Inc. Suzhou 215123 China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202201169

Reference39 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. SiC power-switching devices-the second electronics revolution?

3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

4. Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

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