A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Transistor
Author:
Affiliation:
1. The Hong Kong University of Science and Technology,Dept. of Electronic and Computer Engineering,Hong Kong,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579661.pdf?arnumber=10579661
Reference16 articles.
1. 30.5 A GaN 3×3 matrix converter chipset with Drive-by-Microwave technologies
2. Novel Three-Phase Two-Third-Modulated Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs
3. 100 A Solid State Circuit Breaker Using Monolithic GaN Bidirectional Switch with Two-Step Gate-Discharging Technique
4. Design and Implementation of a Highly Efficient Three-Level T-Type Converter for Low-Voltage Applications
5. 650 V 3.1 mΩcm2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor
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