Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting-Reference-Cited by-同舟云学术

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Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting

Published:2019-08-29 Issue:9 Volume:123 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Poncé Samuel^ORCID,Jena Debdeep,Giustino Feliciano

Funder

Leverhulme Trust

Engineering and Physical Sciences Research Council

Horizon 2020 Framework Programme

National Science Foundation

Air Force Office of Scientific Research

University of Oxford Advanced Research Computing

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.123.096602/fulltext

Reference56 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

3. GaN Technology for Power Electronic Applications: A Review

4. The 2018 GaN power electronics roadmap

5. GaN on Si Technologies for Power Switching Devices

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