Atomic depth distribution and effects of surfactants in growth of Ag and Au on Si(111)-3×3-Ga(1ML),−4×1-In and−23×23-Sn surfaces at room temperature
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.085316/fulltext
Reference43 articles.
1. Surfactants in epitaxial growth
2. Defect self-annihilation in surfactant-mediated epitaxial growth
3. Surfactant-induced layer-by-layer growth of Ag on Ag(111)
4. Atomic Depth Distribution Analysis of In and Ga on Si(111) during Epitaxial Growth and New Surfactant-Mediated Epitaxy
5. Observation of In Growth Modes on Si(111)-$\sqrt{\bf3}\times\sqrt{\bf3}$-Ga Using an Ultrahigh-Vacuum Scanning Electron Microscope
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