Observation of In Growth Modes on Si(111)-$\sqrt{\bf3}\times\sqrt{\bf3}$-Ga Using an Ultrahigh-Vacuum Scanning Electron Microscope
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surfactant-mediated growth of an ordered flat film of an intrinsic liquid metal on a semiconductor surface: Ga onSi(111)−4×1−In;Physical Review B;2002-10-07
2. Atomic depth distribution and effects of surfactants in growth of Ag and Au on Si(111)-3×3-Ga(1ML),−4×1-In and−23×23-Sn surfaces at room temperature;Physical Review B;2002-08-19
3. ELECTRON STANDING WAVES AT A SURFACE DURING REFLECTION HIGH ENERGY ELECTRON DIFFRACTION AND APPLICATION TO STRUCTURE ANALYSIS;International Journal of Modern Physics B;2000-08-20
4. Structural transformations at room temperature adsorption of In on Si(111)√3 × √3-In surface: LEED-AES-STM study;Surface Science;1997-10
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