Substitutional carbon in germanium
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.11167/fulltext
Reference27 articles.
1. Vibrational absorption of carbon in silicon
2. Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy
3. Theory of off-center impurities in silicon: Substitutional nitrogen and oxygen
4. Theory of substitutional carbon and boron in silicon
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