Identification of fragment ions produced from hexamethyldigermane and the production of low-energy beam of fragment ion possessing Ge-C bond-Reference-Cited by-同舟云学术

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Identification of fragment ions produced from hexamethyldigermane and the production of low-energy beam of fragment ion possessing Ge-C bond

Published:2019-02 Issue:2 Volume:9 Page:025008
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Yoshimura Satoru¹,Sugimoto Satoshi¹,Takeuchi Takae²^ORCID,Kiuchi Masato¹³

Affiliation:

1. Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

2. Department of Chemistry, Nara Women’s University, Kitauoyanishi-machi, Nara, Nara 630-8506, Japan

3. National Institute of Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5084181

Reference31 articles.

1. Formation of iron film by ion beam deposition

2. Growth of carbon thin film by low-energy mass-selected ion beam deposition

3. Optical properties of Ge1-yCy alloys

4. Optical and electronic properties of SiGeC alloys grown on Si substrates

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Alkyl Germanes: Active lubricant additives in PAO-10;Tribology International;2024-11

2. Deposition of germanium dioxide films by the injection of oxygen ion beam in conjunction with hexamethyldigermane;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-11

3. Identification of fragment ions produced by the decomposition of tetramethyltin and the production of low-energy Sn+ ion beam;PLOS ONE;2021-06-25

4. Characteristics of films deposited by the irradiation of GeCHx+ ions produced from hexamethyldigermane and their dependence on the injected ion energy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-12

5. Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane;AIP Advances;2019-09

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