Characteristics of films deposited by the irradiation of GeCHx+ ions produced from hexamethyldigermane and their dependence on the injected ion energy-Reference-Cited by-同舟云学术

Characteristics of films deposited by the irradiation of GeCHx+ ions produced from hexamethyldigermane and their dependence on the injected ion energy

Published:2019-12 Issue: Volume:461 Page:1-5
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yoshimura Satoru,Sugimoto Satoshi,Takeuchi Takae^ORCID,Murai Kensuke,Kiuchi Masato

Funder

JSPS KAKENHI

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference28 articles.

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3. Growth of 3C-SiC(100) thin films on Si(100) by molecular ion beam deposition;Matsumoto;Surf. Sci.,2001

4. The Elements;Emsley,1998

5. Optical properties of Ge1-yCy alloys;Orner;J. Electr. Mat.,1996

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