Paving the way to dislocation reduction in Ge/Si(001) heteroepitaxy using C-based strained layer superlattices
Author:
Affiliation:
1. Institute of Electronic Materials and Devices, Leibniz University Hannover, Schneiderberg 32, 30167 Hannover, Germany
2. Laboratory of Nano and Quantum Engineering, Leibniz University Hannover, Schneiderberg 39, 30167 Hannover, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0004352
Reference34 articles.
1. High-performance Ge-on-Si photodetectors
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3. Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K
4. GaAs/Ge/Si epitaxial substrates: Development and characteristics
5. Quantum ballistic transport in strained epitaxial germanium
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1. Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates;Thin Solid Films;2022-12
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