Photoluminescence and photoluminescence excitation of 0.635-eVEL0 emission in oxygen-doped semi-insulating GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.11889/fulltext
Reference33 articles.
1. Identification of oxygen‐related midgap level in GaAs
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3. Deep photoluminescence band related to oxygen in gallium arsenide
4. Electron traps in bulk and epitaxial GaAs crystals
5. On the Preparation of High Purity Gallium Arsenide
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