Identification of oxygen‐related midgap level in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94751
Reference15 articles.
1. The role of deep‐level centers and compensation in producing semi‐insulating GaAs
2. Compensation mechanisms in GaAs
3. Electron traps in bulk and epitaxial GaAs crystals
4. Direct evidence for the nonassignment to oxygen of the main electron trap in GaAs
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