Spectral distributions of photoquenching rate and multimetastable states for midgap electron traps (EL2 family) in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94972
Reference15 articles.
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2. The origin of EL2 family evidenced by STM direct observations of individual photoquenching behaviors;Physica B: Condensed Matter;2003-12
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5. Luminescence and deep‐level characteristics of GaAs/Si with atomic layer epitaxy grown predeposition layers;Journal of Applied Physics;1996-06
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