Non-extrinsic conduction in semi-insulating gallium arsenide
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference7 articles.
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4. A comparative study of deep levels created by low dose implantation of hydrogen, oxygen and silicon into MOCVD grown n-GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-12
5. Characterization of deep levels and carrier compensation created by proton irradiation in undoped GaAs;Journal of Applied Physics;1995-08
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