Defect Levels in n-Type Gallium Arsenide and Gallium Aluminum Arsenide Layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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5. Determination of band off-sets in MBE grown GaAlAs/GaAs/GaAlAs quantum well heterostructures: application of DLTS and photoluminescence under hydrostatic pressure;2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)
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