The fine structure of electron irradiation induced EL2-like defects inn-GaAs
Author:
Affiliation:
1. Department of Physics, University of Pretoria, Private Bag X20, Pretoria 0002, South Africa
Funder
University of Pretoria (UP)
National Research Foundation (NRF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4945774
Reference46 articles.
1. Point Defect Engineering of High-Performance Bismuth-Telluride-Based Thermoelectric Materials
2. Point defect engineering strategies to suppress A-center formation in silicon
3. The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
4. Electric Field Enhanced Emission from Two Alpha-Particle Irradiation Induced Traps in n-GaAs
5. Dopant-related metastable defects in particle irradiated n-GaAs
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*;Chinese Physics B;2020-03-01
2. A study on defect annealing in GaAs nanostructures by ion beam irradiation;Bulletin of Materials Science;2020-02-21
3. Defects in swift heavy ion irradiated n-4H-SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-12
4. Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon;WOMEN IN PHYSICS: 6th IUPAP International Conference on Women in Physics;2019
5. Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs;Semiconductor Science and Technology;2018-11-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3