Dopant-related metastable defects in particle irradiated n-GaAs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Electrical and optical characterization of metastable deep-level defects in GaAs
2. Defects in semiconductors, ICDS-19, Pt 2;Wada,1997
3. Defects in Semiconductors, ICDS-19, Pt 2;Alex,1997
4. Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides
5. Deep Level Transient Spectroscopy Characterization of Defects Introduced in n-GaAs after Alpha Irradiation at 15 K
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The fine structure of electron irradiation induced EL2-like defects inn-GaAs;Journal of Applied Physics;2016-04-14
2. Metastable irradiation induced defects in Be doped Al0.5Ga0.5As MBE layers;Physica B: Condensed Matter;2001-12
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