Deep traps in GaAs under hydrostatic pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference21 articles.
1. Electron traps in bulk and epitaxial GaAs crystals
2. Hole traps in bulk and epitaxial GaAs crystals
3. A study of deep levels in GaAs by capacitance spectroscopy
4. W. Jantsch, K. Wünstel, O. Kumagai and P. Vogl: to be published.
5. Pressure dependence of the deep level associated with oxygen inn‐GaAs
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