Symmetry determination of theEL2 defect by numerical fitting of capacitance transients under uniaxial stress
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.1690/fulltext
Reference37 articles.
1. EL2 in GaAs: Present Status
2. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
3. Photoluminescence studies of theEL2 defect in gallium arsenide under external perturbations
4. Isolated arsenic-antisite defect in GaAs and the properties ofEL2
5. Stress splitting of theA1→T2transition ofAsGa: Implied absence ofAsiin the structure ofEL2
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors;Journal of Applied Physics;2004-11
2. High-resolution spectroscopy of the zero-phonon line of the deep donor EL2 in GaAs;Physical Review B;1997-05-15
3. Comparison of neutron and electron irradiation on the EL2 defect in GaAs;Journal of Applied Physics;1995-04
4. Effect of pressure on defect-related emission in heavily silicon-doped GaAs;Physical Review B;1994-11-15
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